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Gardner Business Media. Archived from the original on 16 July 2017. Retrieved 10 October 2019. Ion plating uses energetic ion bombardment throughout deposition to densify the deposit and control properties of the coating comparable to stress and microstructure. Grant-Jacob, James A.; Beecher, Stephen J.; Riris, Haris; Yu, electronic cigarettes Anthony W.; Shepherd, David P.; Eason, Robert W.; Mackenzie, Jacob I.

(23 October 2017). "Dynamic management of refractive index during pulsed-laser-deposited waveguide development". Grant-Jacob, Best vapor James A.; Beecher, Stephen J.; Prentice, Jake J.; Shepherd, David P.; Mackenzie, Jacob I.; Eason, Robert W. (June 2018). "Pulsed laser deposition of crystalline garnet waveguides at a development fee of 20 μm per hour".

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"Growth and magnetism of metallic thin movies and multilayers by pulsed-laser deposition". Yang, W; Araki H; Kohyama A; Thaveethavorn S; Suzuki H; Noda T (2004). "Fabrication in-situ SiC nanowires/SiC matrix composite by chemical vapor infiltration process". It has been demonstrated that the opening concentrations could be adjusted between 1014 and 1021 cm−3 by simply adjusting the alkyl beam strain and the TMGa/TEGa ratio, offering means for achieving excessive and controllable p-sort doping of GaAs.

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Tsang, W.T. (1989). "From chemical vapor epitaxy to chemical beam epitaxy". Tsang, W.T. (1987). "Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure units". Chemical beam epitaxy was first demonstrated by W.T. The molecular beams of gaseous source materials injectors or effusion jets that guarantee a homogeneous beam profile. The sputtered species from the substrate and the particles emitted from the target type a collision region, which serves as a supply for condensation of particles.

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