Method for Making Aluminum Single Crystal Interconnections On Insulators > 자유게시판

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FIG. 7B exhibits that a bent portion of wiring 20 is bent in an angle of 60 and a hundred and twenty degrees. FIG. 7A shows that a bent portion of wiring 20 is bent in an angle of one hundred twenty levels. Identifying each crystal side from an angle thereof, the respective crystal sides have been discovered as shown in FIG. 14. Moreover, by observing the cross sections of other crystal seeds, it was discovered that a cross sectional shape determined by the crystal side was equal and the in-aircraft orientation of the crystal seed was controlled in the floor thereof in order to indicate the same orientation. In keeping with still one other side of the current invention, there is supplied a method of producing a semiconductor system comprising the steps of: forming a groove having a predetermined sample form on the surface of a substrate; forming a first steel thin movie on the substrate; agglomerating the first metal movie by annealing in order to fill the first metal into not less than a portion of the groove whereas formation of a native oxide film thereon is suppressed; forming a second metal skinny movie manufactured from a same materials as the primary steel thin movie, on the substrate with agglomerated first thin movie; and patterning the first and second thin movies.

In the identical determine, the vertical axis thereof indicates an X-ray depth, in order that the higher the intensity turns into the higher the crystallization thereof is. Ar was the fuel that was utilized within the sputtering, the background pressure was lower than 10.sup.-8 Torr, the strain through the sputtering was 3.occasions.10.sup.-Three Torr, and the applied power was 6 KW, in order to kind the Al movie whereas suppressing the formation of the native oxide film on the Al floor. By this truth, it's clearly indicated that the further most well-liked orientation is effected in a way where the first Al film is separated so as to type a crystal seed (although not proven) and the second Al movie is grown primarily based on the crystal seed. As for materials akin to Cu and Ag which have a decrease resistance than Al-containing material, Aluminum single wire it is tough to type a compound having a high vapor pressure. In view of the foregoing problems, an object of the present invention is to offer an electrode interconnection by which a preferred orientation normal to the substrate is further improved, and an in-plane rotation of crystal grains in substrate face is suppressed so as to have an excellent endurance against stressmigration and electromigration.

However, when used as the plug is the completely different steel from the upper and/or decrease interconnections, an interconnection metal atom transferred because of the electromigration and stressmigration phenomena is hindered from the switch thereof on account of the plug. In a single facet of the current invention, there may be provided a method for making single-crystal aluminum interconnection, the strategy contains the steps of forming a groove having a predetermined sample shape on the surface of a substrate; forming a steel movie on the substrate whereas response with the surface of the substrate is suppressed; and agglomerating the metallic film by in-situ annealing, wherein agglomeration of the steel movie is began earlier than the steel film reacts with the floor of the substrate because of annealing, whereas formation of a native oxide on the metallic film is suppressed, and whereby the steel film is stuffed into the groove by annealing at a predetermined temperature for a predetermined period of time.

According to another side of the current invention, there's provided a method of producing a semiconductor machine comprising the steps of: forming a groove having a predetermined sample shape on the surface of a substrate; forming a metal film on the substrate; selectively removing the metal film formed in an space apart from the groove; removing a native oxide movie formed on the steel movie; and agglomerating the steel film by annealing in an vacuum atmosphere so as to fill in the steel movie into the groove whereas re-formation of the native oxide film is suppressed. Moreover, so as to enhance the step protection at the time of Al movie formation by sputtering, groove shapes resembling in FIG. 42A-42C may serve the purpose and be applied to the primary by means of tenth embodiments. In distinction thereto, the method during which the Al is stuffed into the groove of the interlayer insulator realizes that the stress is dispersed as described within the sixth and eighth embodiments Consequently, there is realized the electrode wiring construction by which the crystal grain boundaries do not happen in the bending portion or wiring connecting portion. Still another object thereof is to offer an electrode wiring construction by which there remains no mechanical stress, a contact resistance is decreased, and a heat radiating effect is improved.